summary n-channel v (br)dss = 30v; r ds(on) = 0.12 ;i d = 3.7a p-channel v (br)dss = -30v; r ds(on) = 0.21 ;i d = -2.7a description packaged in the new innovative 3mm x 2mm mlp(micro leaded package) outline this dual 30v n channel trench mosfet utilizes a unique structure combining the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage power management applications. users will also gain several other key benefits : performance capability equivalent to much larger packages improved circuit efficiency & power levels pcb area and device placement savings reduced component count features ? low on - resistance ? fast switching speed ? low threshold ? low gate drive ? 3mm x 2mm mlp applications ? mosfet gate drive ? lcd backlight inverters ? motor control device marking c01 ZXMC3AM832 provisional issue d - july 2002 1 mpps? miniature package power solutions complementary 30v enhancement mode mosfet device reel tape width quantity per reel ZXMC3AM832ta 7 ?? 8mm 3000 units ZXMC3AM832tc 13?? 8mm 10000 units ordering information 3mm x 2mm dual die mlp 1 2 3 4 5 678 3 x 2 dual mlp underside view pinout
ZXMC3AM832 provisional issue d - july 2002 2 parameter symbol value unit junction to ambient (a)(f) r ja 83.3 c/w junction to ambient (b)(f) r ja 51 c/w junction to ambient (c)(f) r ja 125 c/w junction to ambient (d)(f) r ja 111 c/w junction to ambient (d)(g) r ja 73.5 c/w junction to ambient (e)(g) r ja 41.7 c/w thermal resistance notes (a) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditio ns with all exposed pads attached. the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with minimal lead connections only. (d) for a dual device surface mounted on 10 sq cm single sided 1oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) for a dual device surface mounted on 85 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) for a dual device with one active die. (g) for dual device with 2 active die running at equal power. (h) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (i) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. the thermal resistance for a dual device mounted on 1.5mm thick fr4 board using minimum copper 1 oz we ight, 1mm wide tracks and one half of the device active is rth = 250c/w giving a power rating of ptot = 500mw. parameter symbol n-channel p-channel unit drain-source voltage v dss 30 -30 v gate-source voltage v gs 20 20 v continuous drain current@v gs =10v; t a =25 c (b)(f) @v gs =10v; t a =25 c(b)(f) @v gs =10v; t a =25 c (a)(f) i d 3.7 3.0 2.9 -2.7 -2.2 -2.1 a a pulsed drain current i dm 12.4 -9.2 a continuous source current (body diode)(b)(f) i s 2.4 -2.8 a pulsed source current (body diode) i sm 12.4 -9.2 a power dissipation at ta=25c (a)(f) linear derating factor p d 1.5 12 w mw/c power dissipation at ta=25c (b)(f) linear derating factor p d 2.45 19.6 w mw/c power dissipation at ta=25c (c)(f) linear derating factor p d 1 8 w mw/c power dissipation at ta=25c (d)(f) linear derating factor p d 1.13 8 w mw/c power dissipation at ta=25c (d)(g) linear derating factor p d 1.7 13.6 w mw/c absolute maximum ratings.
ZXMC3AM832 provisional issue d - july 2002 3 110 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 110 10m 100m 1 10 note (a)(f) 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area single pulse, t amb =25c dc 10ms i d drain current (a) v ds drain-source voltage (v) 1oz cu note (d)(f) 1oz cu note (d)(g) 2oz cu note (a)(f) 2oz cu note (e)(g) derating curve max power dissipation (w) temperature (c) note (a)(f) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 1oz copper note (g) 1oz copper note (f) 2oz copper note (f) 2oz copper note (g) thermal resistance v board area thermal resistance (c/w) boardcuarea(sqcm) 1oz copper note (g) 2oz copper note (g) 1oz copper note (f) 2oz copper note (f) power dissipation v board area t amb =25c t jmax =150c continuous p d dissipation (w) boardcuarea(sqcm) dc 1s 100ms 10ms note (a)(f) single pulse, t amb =25c 1ms 100us r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a) typical characteristics
ZXMC3AM832 provisional issue d - july 2002 4 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 30 v i d =250 a, v gs =0v zero gate voltage drain current i dss 0.5 a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.106 0.12 0.18 ? ? v gs =10v, i d =2.5a v gs =4.5v, i d =2.0a forward transconductance (1)(3) g fs 3.5 s v ds =4.5v,i d =2.5a dynamic (3) input capacitance c iss 190 pf v ds =25v,v gs =0v, f=1mhz output capacitance c oss 38 pf reverse transfer capacitance c rss 20 pf switching (2) (3) turn-on delay time t d(on) 1.7 ns v dd =15v, i d =2.5a r g =6.0 ? ,v gs =10v rise time t r 2.3 ns turn-off delay time t d(off) 6.6 ns fall time t f 2.9 ns gate charge q g 2.3 nc v ds =15v,v gs =5v, i d =2.5a total gate charge q g 3.9 nc v ds =15v,v gs =10v, i d =2.5a gate-source charge q gs 0.6 nc gate-drain charge q gd 0.9 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =1.7a, v gs =0v reverse recovery time (3) t rr 17.7 ns t j =25c, i f =2.5a, di/dt= 100a/ s reverse recovery charge (3) q rr 13.0 nc n-channel electrical characteristics (at t amb = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMC3AM832 provisional issue d - july 2002 5 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss -30 v i d =-250 a, v gs =0v zero gate voltage drain current i dss 1 av ds =-30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -0.8 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.210 0.330 ? ? v gs =-10v, i d =-1.4a v gs =-4.5v, i d =-1.1a forward transconductance (1)(3) g fs 2.48 s v ds =-15v,i d =-1.4a dynamic (3) input capacitance c iss 204 pf v ds =-15 v, v gs =0v, f=1mhz output capacitance c oss 39.8 pf reverse transfer capacitance c rss 25.8 pf switching (2) (3) turn-on delay time t d(on) 1.15 ns v dd =-15v, i d =-1a r g =6.0 ? ,v gs =-10v rise time t r 2.29 ns turn-off delay time t d(off) 12.1 ns fall time t f 7.48 ns gate charge q g 2.58 nc v ds =-15v,v gs =-5v, i d =-1.4a total gate charge q g 5.15 nc v ds =-15v,v gs =-10v, i d =-1.4a gate-source charge q gs 0.65 nc gate-drain charge q gd 0.92 nc source-drain diode diode forward voltage (1) v sd -0.85 -0.95 v t j =25c, i s =-1.1a, v gs =0v reverse recovery time (3) t rr 18.6 ns t j =25c, i f =-0.95a, di/dt= 100a/ s reverse recovery charge (3) q rr 14.8 nc p-channel electrical characteristics (at t amb = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMC3AM832 provisional issue d - july 2002 6 0.1 1 10 0.1 1 10 0.1 1 10 0.1 1 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 1 0.4 0.6 0.8 1.0 1.2 0.1 1 10 5v 7v 4.5v 3.5v 2.5v 4v output characteristics t = 25c 3v v gs 10v i d drain current (a) v ds drain-source voltage (v) 5v 2v 2.5v 4.5v 7v 10v 4v 3v output characteristics t = 150c v gs 3.5v i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t=25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d =2.5a v gs(th) v gs =v ds i d = 250ua normalised r ds(on) and v gs( t h) tj junction temperature (c) 4.5v 7v 5v 4v 10v 3.5v 2.5v on-resistance v drain current t=25c 3v v gs r ds(on) drain-source on-resistance ( w ) i d drain current (a) t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a) n-channel typical characteristics
ZXMC3AM832 provisional issue d - july 2002 7 0.1 1 10 0 50 100 150 200 250 300 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) v ds -drain-sourcevoltage(v) 01234 0 2 4 6 8 10 i d =2.5a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) n-channel typical characteristics
ZXMC3AM832 provisional issue d - july 2002 8 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 12345 0.1 1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 5v 10v 4v 3.5v -v gs 2.5v 2v 3v output characteristics t=25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 5v 4v 3.5v 3v 2v 1.5v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics -v ds =10v t=25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs =-10v i d =-1.4a v gs(th) v gs =v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 5v 10v 3v 2v 4v 3.5v 2.5v on-resistance v drain current t=25c -v gs r ds(on) drain-source on-resistance (?) -i d drain current (a) t = 150c t=25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a) p-channel typical characteristics
ZXMC3AM832 provisional issue d - july 2002 9 0.1 1 10 0 50 100 150 200 250 300 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) -v ds -drain-sourcevoltage(v) 0246 0 2 4 6 8 10 i d = -1.4a v ds = -15v gate-sourcevoltagevgatecharge capacitance v drain-source voltage q-charge(nc) -v gs gate-source voltage (v) p-channel typical characteristics
ZXMC3AM832 provisional issue d - july 2002 10 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4422 fax: (44) 161 622 4420 uk.sales@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny11788 usa telephone: (631) 360 2222 fax: (631) 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza, tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2002 controlling dimensions in millimetres approx. converted dimensions in inches mlp832 package outline (3mm x 2mm micro leaded package) dim millimetres inches dim millimetres inches min. max. min. max. min. max. min. max. a 0.80 1.00 0.031 0.039 e 0.65 ref 0.0256 bsc a1 0.00 0.05 0.00 0.002 e 2.00 bsc 0.0787 bsc a2 0.65 0.75 0.0255 0.0295 e2 0.43 0.63 0.017 0.0249 a3 0.15 0.25 0.006 0.0098 e4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 l 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 l2 0.125 0.00 0.005 d 3.00 bsc 0.118 bsc r 0.075 bsc 0.0029 bsc d2 0.82 1.02 0.032 0.040 0 12 0 12 mlp832 package dimensions
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